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Showing results 1 to 5 of 5

1
An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

2
Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current

Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.2902 - 2906, 2010-11

3
Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06

4
Workfunction-Tunable, N-Doped Reduced Graphene Transparent Electrodes for High-Performance Polymer Light-Emitting Diodes

Hwang, Jin-Ok; Park, Ji-Sun; Choi, Dong-Sung; Kim, Ju-Young; Lee, Sun-Hwa; Lee, Kyung-Eun; Kim, Yong-Hyun; et al, ACS NANO, v.6, no.1, pp.159 - 167, 2012-01

5
투명 및 플렉시블 유기 발광 소자에 적용 가능한 투명전극 재료 및 구조 연구 = Transparent electrode materials and structures for application to transparent and flexible OLEDslink

김동영; Kim, Dong-Young; et al, 한국과학기술원, 2016

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