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An electron microscopy study on the formation mechanism of hillocks on the (100)CdTe/GaAs Kim, YK; Lee, JeongYong; Kim, HS; Song, JH; Suh, SH, JOURNAL OF CRYSTAL GROWTH, v.192, no.1-2, pp.109 - 116, 1998-08 |
Characteristics of InGaN/GaN light-emitting diode with Si delta-doped GaN contact layer Jeon, SR; Jo, MS; Humg, TV; Yang, GM; Cho, HK; Lee, JeongYong; Hwang, SW; et al, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.188, no.1, pp.163 - 166, 2001-11 |
Growth Mechanism of Catalyst-Free and Mask-Free Heteroepitaxial GaN Submicrometer- and Micrometer-Sized Rods under Biaxial Strain: Variation of Surface Energy and Adatom Kinetics Ko, Suk-Min; Kim, Je-Hyung; Ko, Young-Ho; Chang, Yun-Hee; Kim, Yong-Hyun; Yoon, Jong-Moon; Lee, Jeong-Yong; et al, CRYSTAL GROWTH & DESIGN, v.12, no.8, pp.3838 - 3844, 2012-08 |
INTERFACIAL LAYER FORMATION ON CORRUGATED INP DURING THE EPITAXIAL-GROWTH OF GAINASP/INP DISTRIBUTED-FEEDBACK LASER-DIODE STRUCTURE Jang, DH; Kim, JS; Park, KH; Lee, JK; Cho, HS; Nahm, S; Lee, SW; et al, JOURNAL OF CRYSTAL GROWTH, v.156, no.4, pp.368 - 372, 1995-12 |
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