Showing results 1 to 12 of 12
A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure Cho, T; Kim, JW; Oh, JE; Choe, JW; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.4B, pp.2442 - 2444, 1999-04 |
Absorption Spectroscopy Studies on Coherently-Strained InGaAs/GaAs Multiple Quantum Well Structures Hong, Songcheol; Oh, JE, International Conference on VLSI and CAD, 1989 |
Conjugation of drug to poly(D,L-lactic-co-glycolic acid) for controlled release from biodegradable microspheres Oh, JE; Nam, YoonSung; Lee, KH; Park, TG, JOURNAL OF CONTROLLED RELEASE, v.57, no.3, pp.269 - 280, 1999-02 |
Demonstration of Integrated Multiquantum Well Heterojunction Bipolar Transistor With Gain for Efficient Low Power Optical Switching Hong, Songcheol; Li, W; Oh, JE; Bhattacharya, PK; Singh, J, Topical meeting on Quantum Wells, 1989 |
Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Kwon, YJ; Oh, JE; Gronsky, R, APPLIED PHYSICS LETTERS, v.89, pp.A38 - A38, 2006-07 |
Evaluation of polychlorinated dibenzo-p-dioxin/dibenzofuran (PCDD/F) emission in municipal solid waste incinerators Shin, DH; Choi, Sangmin; Oh, JE; Chang, YS, ENVIRONMENTAL SCIENCE TECHNOLOGY, v.33, no.15, pp.2657 - 2666, 1999-08 |
Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Cho, SM; Kwon, YJ; Oh, JE, APPLIED PHYSICS LETTERS, v.88, pp.380 - 388, 2006-06 |
Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy Kim, YH; Lee, JeongYong; Lee, SH; Oh, JE; Lee, HS; Huh, Y, CHEMICAL PHYSICS LETTERS, v.412, pp.454 - 458, 2005-09 |
Room temperature far infrared (8 similar to 10 mu m) photodetectors using self-assembled InAs quantum dots with high detectivity Kim, JW; Oh, JE; Hong, Songcheol; Park, CH; Yoo, TK, IEEE ELECTRON DEVICE LETTERS, v.21, no.7, pp.329 - 331, 2000-07 |
Room Temperature Operation Long-Wavelength Infrared Photodetector with Self-Assembled InAs Quantum Dots Hong, Songcheol; Cho, T; Kim, JW; Oh, JE, International Workshop on Physics and Applications of Semiconductor Quantum Structures, 1998 |
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06 |
Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy Kim, YH; Lee, JeongYong; Lee, SH; Oh, JE; Lee, HS, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.80, pp.1635 - 1639, 2005-05 |
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