Showing results 3 to 19 of 19
A low-power CMOS direct conversion receiver with 3-dB NF and 30-kHz flicker-noise corner for 915-MHz band IEEE 802.15.4 ZigBee standard Nguyen, Trung-Kien; Oh, Nam-Jin; Le, Viet-Hoang; Lee, Sang-Gug, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.54, no.2, pp.735 - 741, 2006-02 |
A low-power RF direct-conversion receiver/transmitter for 2.4-GHZ band IEEE 802.15.4 standard in 0.18-mu m CMOS technology Nguyen, TK; Krizhanovskii, V; Lee, J; Han, SK; Lee, Sang-Gug; Kim, NS; Pyo, CS, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.54, pp.4062 - 4071, 2006-12 |
(A) study on conducting polymer thin films for the microbolometer sensing material = 마이크로 볼로미터 감지재료를 위한 전도성 폴리머 박막에 관한 연구link Son, Hyeok-Jun; 손혁준; et al, 한국과학기술원, 2009 |
An LC-VCO strongly suppresses the AM-FM conversion caused by varactor Shin, SB; Lee, Sang-Gug, IEICE TRANSACTIONS ON ELECTRONICS, v.E91C, pp.1516 - 1519, 2008-09 |
Analysis of 1/f noise in CMOS preamplifier with CDS circuit Lee, TH; Cho, Gyuseong; Kim, HJ; Lee, SW; Lee, W; Han, SH, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.49, no.4, pp.1819 - 1823, 2002-08 |
Analysis of 1/f noise in LWIR HgCdTe photodiodes Bae, SH; Lee, SJ; Kim, YH; Lee, Hee Chul; Kim, Choong Ki, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.6, pp.877 - 882, 2000-06 |
Analysis of dark current and 1/f noise in long-wavelength infrared $Hg_{1-x}Cd_xTe$ photodiodes = 장파장 적외선 감지를 위한 $Hg_{1-x}Cd_xTe$ 광다이오드의 암전류 및 1/f 잡음 분석link Bae, Soo-Ho; 배수호; et al, 한국과학기술원, 2002 |
Border-trap characterization in high-kappa strained-si MOSFETs Maji, Debabrata; Duttagupta, S. P.; Rao, V. Rarngopal; Yeo, Chia Ching; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.28, no.8, pp.731 - 733, 2007-08 |
Enhanced bolometric properties of nickel oxide thin films for infrared image sensor applications by substitutional incorporation of Li Kang, In-Ku; Reddy, Y. Ashok Kumar; Shin, Young Bong; Kim, Woo Young; Lee, Hee Chul, CERAMICS INTERNATIONAL, v.44, no.7, pp.7808 - 7813, 2018-05 |
Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording![]() Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey, SENSORS, v.17, no.4, 2017-04 |
High-performance RF mixer and operational amplifier BiCMOS circuits using parasitic vertical bipolar transistor in CMOS technology Nam, I; Lee, Kwyro, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.40, pp.392 - 402, 2005-02 |
Low-power direct conversion transceiver for 915 MHz band IEEE 802.15.4b standard based on 0. 18 mu m CMOS technology Nguyen, TK; Le, VH; Duong, QH; Han, SK; Lee, Sang-Gug; Seong, NS; Kim, NS; et al, ETRI JOURNAL, v.30, pp.33 - 46, 2008-02 |
Monte Carlo based time-domain Hspice noise simulation for CSA-CRRC circuit Lee, Tae-Hoon; Cho, Gyuseong, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.505, no.1-2, pp.328 - 333, 2003-06 |
RF CMOS LC-oscillator with source damping resistors Yun, SJ; Cha, CY; Choi, HC; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.16, pp.511 - 513, 2006-09 |
Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress Mheen, B; Kim, M; Song, YJ; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947, 2006-06 |
Sputtering pressure dependent bolometric properties of Ni1-xO thin films for uncooled bolometer applications Kang, In-Ku; Reddy, Y. Ashok Kumar; Shin, Young Bong; Kim, Woo Young; Lee, Hee Chul, CERAMICS INTERNATIONAL, v.43, no.12, pp.9498 - 9504, 2017-08 |
적외선 센서의 볼로미터 저항체로 사용된 다결정 실리콘 박막에 발생하는 TCR 및 1/f Noise의 최적화 방법에 관한 연구 = A research on how to optimize the level of the TCR and 1/f noise which occur in the polycrystalline silicon film used as a bolometer resistorlink 양진영; Yang, Jin-Young; et al, 한국과학기술원, 2006 |
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