DC Field | Value | Language |
---|---|---|
dc.contributor.author | hae-yeol kim | ko |
dc.contributor.author | jae-beom choi | ko |
dc.contributor.author | Lee, Jai-Young | ko |
dc.date.accessioned | 2013-02-27T17:42:42Z | - |
dc.date.available | 2013-02-27T17:42:42Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.17, no.6, pp.3240 - 3245 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/69902 | - |
dc.description.abstract | The crystallization behavior of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma enhanced chemical vapor deposition is investigated in view of the silicon-hydrogen (Si-H-n) bond characteristics. A-Si:H films deposited at various pressures (0.1-1.0 Torr) are annealed to polycrystalline silicon (poly-Si) films in a conventional vacuum furnace at 600 degrees C. The final grain size in the poly-Si films increases with the deposition pressure, up to 1.6 mu m in the case of the films deposited at 1.0 Torr. The Si-H-n bond characteristics are analyzed by Fourier transform infrared spectroscopy and modified gas chromatography for hydrogen thermal evolution experiment. Finally, the Si-H-n bond characteristics are suggested to be an important factor affecting the crystallization behavior of a-Si:H films, which is also related to the film stress as well as the structural disorder in a-Si network. (C) 1999 American Vacuum Society. [S0734-2101(99)03206-6]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | A-SI-H | - |
dc.subject | POLYCRYSTALLINE-SILICON | - |
dc.subject | GLOW-DISCHARGE | - |
dc.subject | RECRYSTALLIZATION | - |
dc.subject | TEMPERATURE | - |
dc.subject | TRANSISTORS | - |
dc.subject | SUBSTRATE | - |
dc.subject | EVOLUTION | - |
dc.subject | SURFACE | - |
dc.subject | NETWORK | - |
dc.title | Effects of silicon-hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000083788400013 | - |
dc.identifier.scopusid | 2-s2.0-0033421048 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 3240 | - |
dc.citation.endingpage | 3245 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
dc.identifier.doi | 10.1116/1.582049 | - |
dc.contributor.nonIdAuthor | hae-yeol kim | - |
dc.contributor.nonIdAuthor | jae-beom choi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | A-SI-H | - |
dc.subject.keywordPlus | POLYCRYSTALLINE-SILICON | - |
dc.subject.keywordPlus | GLOW-DISCHARGE | - |
dc.subject.keywordPlus | RECRYSTALLIZATION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | NETWORK | - |
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