DC Field | Value | Language |
---|---|---|
dc.contributor.author | N-I Lee | ko |
dc.contributor.author | J-W Lee | ko |
dc.contributor.author | S-H Hur | ko |
dc.contributor.author | H-S Kim | ko |
dc.contributor.author | C-H Han | ko |
dc.date.accessioned | 2013-02-27T16:21:17Z | - |
dc.date.available | 2013-02-27T16:21:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-01 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.3B, pp.1125 - 1128 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/69563 | - |
dc.description.abstract | The Effects of the bottom polysilicon doping on the reliability of polyoxides grown using electron cyclotron resonance (ECR) N2O-plasma have been investigated for the interpoly dielectrics (IPDs) of nonvolatile memories (NVMs). In situ doped polysilicon films have a smooth surface. ECR N2O-plasma polyoxide on in situ doped polysilicon has a lower leakage current and a higher breakdown field, furthermore, a lower electron trapping rate and a larger charge-to-breakdown (Q(bd)) UP to 10 C/cm(2), which is comparable to the electrical properties of ONO IPD. This is mainly attributed not only to a nitrogen-rich layer with strong Si-N bonds but also to a smooth interface. We conclude that ECR N2O-plasma polyoxide on in sitar doped polysilicon is a good candidate for an interpoly dielectric of future high density NVMs. | - |
dc.language | English | - |
dc.publisher | Japan Soc Applied Physics | - |
dc.subject | DOUBLE POLY STRUCTURES | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | THERMAL-OXIDATION | - |
dc.subject | PLASMA | - |
dc.subject | OXIDE | - |
dc.subject | KINETICS | - |
dc.subject | DEVICES | - |
dc.subject | FILM | - |
dc.subject | N2O | - |
dc.title | Effects of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown by Using Electron Cyclotron Resonance N2O-Plasma | - |
dc.type | Article | - |
dc.identifier.wosid | 000073664900021 | - |
dc.identifier.scopusid | 2-s2.0-11644280441 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 3B | - |
dc.citation.beginningpage | 1125 | - |
dc.citation.endingpage | 1128 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | C-H Han | - |
dc.contributor.nonIdAuthor | N-I Lee | - |
dc.contributor.nonIdAuthor | J-W Lee | - |
dc.contributor.nonIdAuthor | S-H Hur | - |
dc.contributor.nonIdAuthor | H-S Kim | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | plasma oxide | - |
dc.subject.keywordAuthor | nitrous oxide | - |
dc.subject.keywordAuthor | polysilicon film | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | surface roughness | - |
dc.subject.keywordAuthor | nonvolatile memories | - |
dc.subject.keywordAuthor | interpoly dielectric | - |
dc.subject.keywordPlus | DOUBLE POLY STRUCTURES | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | THERMAL-OXIDATION | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordPlus | N2O | - |
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