DC Field | Value | Language |
---|---|---|
dc.contributor.author | Koo, JY | ko |
dc.contributor.author | Yi, JY | ko |
dc.contributor.author | Hwang, CY | ko |
dc.contributor.author | Kim, DH | ko |
dc.contributor.author | Lee, S | ko |
dc.contributor.author | Ko, YJ | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.contributor.author | Shin, DH | ko |
dc.date.accessioned | 2013-02-27T15:29:16Z | - |
dc.date.available | 2013-02-27T15:29:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-02 | - |
dc.identifier.citation | SURFACE REVIEW AND LETTERS, v.5, no.1, pp.1 - 4 | - |
dc.identifier.issn | 0218-625X | - |
dc.identifier.uri | http://hdl.handle.net/10203/69351 | - |
dc.description.abstract | The structure of a clean Si(100) and a Ni-contaminated Si(100) was investigated using scanning tunneling microscopy. The clean Si(100) shows the 2 x 1 reconstruction with a surface dimer vacancy density less than 2%. The major defects on the clean surface are a single dimer vacancy and the C defect. A small amount of Ni on the surface drastically changes the surface structure and produces 2 x n reconstructions. The formation of vacancy clusters is favored. A rebonded S-B step is preferred on the clean Si(100) while a nonrebonded S-B step with a split-off dimer is mainly observed on the Ni-contaminated Si(100) and in the vicinity of dimer vacancies of the lower terrace on the clean Si(100). | - |
dc.language | English | - |
dc.publisher | WORLD SCIENTIFIC PUBL CO PTE LTD | - |
dc.subject | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject | VACANCY DIFFUSION | - |
dc.subject | BUCKLED DIMERS | - |
dc.subject | SI(001) | - |
dc.subject | TEMPERATURE | - |
dc.subject | STEPS | - |
dc.subject | DEFECTS | - |
dc.subject | KINETICS | - |
dc.subject | DYNAMICS | - |
dc.subject | GROWTH | - |
dc.title | Atomic structure of Si(100) surfaces | - |
dc.type | Article | - |
dc.identifier.wosid | 000073415800002 | - |
dc.identifier.scopusid | 2-s2.0-0032365997 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 1 | - |
dc.citation.endingpage | 4 | - |
dc.citation.publicationname | SURFACE REVIEW AND LETTERS | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Koo, JY | - |
dc.contributor.nonIdAuthor | Yi, JY | - |
dc.contributor.nonIdAuthor | Hwang, CY | - |
dc.contributor.nonIdAuthor | Kim, DH | - |
dc.contributor.nonIdAuthor | Lee, S | - |
dc.contributor.nonIdAuthor | Ko, YJ | - |
dc.contributor.nonIdAuthor | Shin, DH | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | VACANCY DIFFUSION | - |
dc.subject.keywordPlus | BUCKLED DIMERS | - |
dc.subject.keywordPlus | SI(001) | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | STEPS | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | DYNAMICS | - |
dc.subject.keywordPlus | GROWTH | - |
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