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Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

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dc.contributor.authorLee, JSko
dc.contributor.authorHa, DWko
dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorKing, TJko
dc.contributor.authorBokor, Jko
dc.date.accessioned2007-06-27T06:36:47Z-
dc.date.available2007-06-27T06:36:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-01-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.24, no.1, pp.31 - 33-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/691-
dc.description.abstractWe report the low-frequency noise characteristics of ultrathin body (UTB) p-channel MOSFETs with molybdenum (Mo) as the gate material. Using the number fluctuation model with correlated mobility fluctuation, the dependence of the noise behavior on bias condition is explained. The impact of nitrogen implantation (for gate work function engineering) on the noise behavior is also presented. An exponential increase in noise with nitrogen implant dose is attributed to interface-trap generation caused by nitrogen penetration through the gate oxide.-
dc.description.sponsorshipThis work was supported by the Semiconductor Research Corporation under Contract 2000-NJ-850 and MARCO Contract 2001-MT-887. The low frequency noise characterization system at UC Berkeley was supported by the AFOSR DURIP Grant F49620-01-1-0285. The review of this letter was arranged by Editor K. De Meyer.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectTRANSISTORS-
dc.titleLow-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate-
dc.typeArticle-
dc.identifier.wosid000181528700011-
dc.identifier.scopusid2-s2.0-0037253003-
dc.type.rimsART-
dc.citation.volume24-
dc.citation.issue1-
dc.citation.beginningpage31-
dc.citation.endingpage33-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2002.807025-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorLee, JS-
dc.contributor.nonIdAuthorHa, DW-
dc.contributor.nonIdAuthorKing, TJ-
dc.contributor.nonIdAuthorBokor, J-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorlow-frequency noise-
dc.subject.keywordAuthormetal gate-
dc.subject.keywordAuthormolybdenum-
dc.subject.keywordAuthornitrogen implantation-
dc.subject.keywordAuthoroxide trap density-
dc.subject.keywordAuthorsilicon-on-insulator (SOI)-
dc.subject.keywordAuthorthin-body-
dc.subject.keywordPlusTRANSISTORS-
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