A High-Endurance Low-Temperature Polysilicon Thin-Film Transistor EEPROM Cell

Abstract

A planar type polysilicon thin-film transistor (poly-Si TFT) EEPROM cell with electron cyclotron resonance (ECR) N2O-plasma oxide has been developed with a tow temperature (less than or equal to 400 degrees C) process. The poly-Si TFT EEPROM cell has an initial threshold voltage shift of 4 V for programming and erasing voltages of 11 V and -11 V, respectively. Furthermore, the poly-Si TFT EEPROM cell maintained the threshold voltage shift of 4 V after 100 000 program/erase cycles. The excellent high endurance of the fabricated poly-Si TFT EEPROM cell is attributed to ECR N2O-plasma oxide with good charge-to-breakdown (Qbd) characteristics.