DC Field | Value | Language |
---|---|---|
dc.contributor.author | 황치선 | ko |
dc.contributor.author | 공향식 | ko |
dc.contributor.author | 배병성 | ko |
dc.contributor.author | 이주천 | ko |
dc.date.accessioned | 2013-02-27T14:39:11Z | - |
dc.date.available | 2013-02-27T14:39:11Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-07 | - |
dc.identifier.citation | 새물리, v.8, no.4, pp.356 - 360 | - |
dc.identifier.issn | 0374-4914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/69133 | - |
dc.language | Korean | - |
dc.publisher | 한국물리학회 | - |
dc.title | 비정질 실리콘 TFT의 준 언정성 특성에대한 새로운 평가방법 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 356 | - |
dc.citation.endingpage | 360 | - |
dc.citation.publicationname | 새물리 | - |
dc.contributor.nonIdAuthor | 황치선 | - |
dc.contributor.nonIdAuthor | 공향식 | - |
dc.contributor.nonIdAuthor | 배병성 | - |
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