Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide

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dc.contributor.authorAng, CHko
dc.contributor.authorLing, CHko
dc.contributor.authorCheng, ZYko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2013-02-27T14:29:46Z-
dc.date.available2013-02-27T14:29:46Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-09-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.2872 - 2876-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/69091-
dc.description.abstractThe carrier-separation characteristics of a p-channel metal-oxide-semiconductor field-effect transistor with 29 Angstrom gate oxide has been measured at various temperatures from 90 to 375 K. It is found that the gate and source/drain currents at low gate voltage regime (below 0.5 V) were correlated and strongly dependent on temperature above 250 K. The earlier observation has been attributed to the existence of a temperature-sensitive hole direct-tunneling current due to the strong temperature sensitivity of surface hole's concentration at low voltage regime. (C) 2000 American Institute of Physics. [S0021-8979(00)03018-1].-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleOrigin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide-
dc.typeArticle-
dc.identifier.wosid000088796500112-
dc.type.rimsART-
dc.citation.volume88-
dc.citation.issue5-
dc.citation.beginningpage2872-
dc.citation.endingpage2876-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.1288169-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorLing, CH-
dc.contributor.nonIdAuthorCheng, ZY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSILICON DIOXIDE-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusSIO2-
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