A first-principles study of Mg-related defects in GaN

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dc.contributor.authorChang, Kee-Jooko
dc.contributor.authorLee, SGko
dc.date.accessioned2013-02-27T14:13:36Z-
dc.date.available2013-02-27T14:13:36Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-12-
dc.identifier.citationMATERIALS SCIENCE FORUM, v.258-263, pp.1137 - 1141-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/10203/69021-
dc.description.abstractWe study the energetics of Mg-related defects in GaN through first-principles pseudopotential calculations. In p-type GaN, Mg-Ga(-) accepters are found to be compensated by V-N(+) donors and also deactivated by the formation of complexes such as Mg-Ga-V-N and Mg-i-V-N. We suggest that a Mg-i-V-N complex, which consists of a Mg interstitial and a N-vacancy, is responsible for the blue luminescence observed in heavily Mg-doped GaN. Although this defect complex is easily passivated by three hydrogen atoms, thermal annealing recovers the activity of this complex and thereby increases the intensity of the blue luminescence.-
dc.languageEnglish-
dc.publisherTRANSTEC PUBLICATIONS LTD-
dc.subjectPSEUDOPOTENTIALS-
dc.subjectNITRIDE-
dc.subjectFILMS-
dc.titleA first-principles study of Mg-related defects in GaN-
dc.typeArticle-
dc.identifier.wosid000072749500186-
dc.type.rimsART-
dc.citation.volume258-263-
dc.citation.beginningpage1137-
dc.citation.endingpage1141-
dc.citation.publicationnameMATERIALS SCIENCE FORUM-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorLee, SG-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorgallium nitride-
dc.subject.keywordAuthordeep level defect-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusNITRIDE-
dc.subject.keywordPlusFILMS-
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