OBSERVATION OF DEFECTS AND GROWTH ORIENTATIONS OF YBA2CU3OX THIN-FILMS WITH YSZ BUFFER LAYERS ON SI

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We have investigated defects and in-plane orientations of YBa2Cu3Ox thin films prepared by pulsed laser deposition (PLD) with YSZ as a buffer layer. The films showed c-axis oriented growth with the transition temperature T-co up to 87 K. Several types of defects including thermally induced cracks, grain boundaries and outgrowths were observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The grain boundary provided a favorable path for crack propagation. The outgrowths nucleated on the YSZ surface grew with stoichiometric composition. According to X-ray diffraction (XRD) and HRTEM studies the YSZ buffer layer grew with the orientation relationship, YSZ[110]//Si[110] and YSZ(001)//Si(001) up to the YBCO/YSZ interface. The superconducting YBCO films on top grew mainly with YBCO[100]//Si[110] and YBCO(001)//Si(001), with some minor portions of YBCO[110]//Si[110] and YBCO(001)//Si(001).
Publisher
ELSEVIER SCIENCE BV
Issue Date
1995-08
Language
English
Article Type
Article
Citation

PHYSICA C, v.250, no.3-4, pp.375 - 381

ISSN
0921-4534
DOI
10.1016/0921-4534(95)00331-2
URI
http://hdl.handle.net/10203/68694
Appears in Collection
RIMS Journal Papers
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