Novel structure of a silicon field emission cathode with a sputtered TiW gate electrode

Cited 1 time in webofscience Cited 1 time in scopus
  • Hit : 426
  • Download : 0
A novel technique for a gated silicon held emission cathode is proposed in order to decrease the spacing between the tip and the gate electrode of the device, which leads to low voltage operation. This technique is based on the filling characteristics of the sputtered Ti0.1W0.9 layer, which is used as the gate electrode in the shadowed area surrounding the tip with good step coverage. This process is completely compatible to conventional 1.2 mu m complementary metal-oxide-semiconductor standard processes. The experimental results indicate that the diameter of the gate hole is greatly reduced to a subhalf-micron dimension (similar to 0.4 mu m) even when starting with an initial mask size of 1.2 mu m. The I-V characteristics of the cathodes show low turn-on voltages (similar to 25 V) in high vacuum (<3.0 x 10(-7) Torr), The Fowler-Nordheim plots also show good linearity. (C) 1998 American Vacuum Society.
Publisher
AMER INST PHYSICS
Issue Date
1998
Language
English
Article Type
Article
Keywords

FABRICATION; OXIDATION

Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.16, no.1, pp.242 - 246

ISSN
1071-1023
DOI
10.1116/1.589788
URI
http://hdl.handle.net/10203/68397
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 1 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0