Growth and the electrical properties of epitaxial CrSi2 films prepared on Si(111) substrates

Cited 4 time in webofscience Cited 0 time in scopus
  • Hit : 429
  • Download : 0
About a 290-Angstrom-thick CrSi2 film was epitaxially grown on a Si(lll) substrate by Cr deposition on a Si(lll)-7x7 substrate at similar to 450 degrees C followed by en situ annealing at similar to 1000 degrees C for 10 min. X-ray diffraction and transmission electron microscopy showed that the CrSi2(001) plane grew parallel to the Si(lll) plane with a CrSi2[210]parallel to Si[110] matching face relationship. CrSi2 is a p-type degenerate semiconductor. The electrical resistivity at room temperature was similar to 5 x 10(-3) Omega cm, and the energy band gap deduced from the temperature dependence of resistivity was similar to 0.3 eV.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1998-07
Language
English
Article Type
Article
Keywords

THIN-FILMS; HETEROEPITAXIAL GROWTH; SILICIDES; SILICON

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, no.1, pp.71 - 75

ISSN
0374-4884
URI
http://hdl.handle.net/10203/68352
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 4 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0