Noise Performances of Pseudomorphic A1GaAs/InGaAs/GaAs HEMTs with Wide Head T-Shaped Gate Recessed by ECR Plasma Etching

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dc.contributor.authorPark, Chul Soonko
dc.date.accessioned2013-02-27T10:34:49Z-
dc.date.available2013-02-27T10:34:49Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-02-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.38, no.2, pp.654 - 657-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/68009-
dc.languageEnglish-
dc.publisherJapan Soc Applied Physics-
dc.titleNoise Performances of Pseudomorphic A1GaAs/InGaAs/GaAs HEMTs with Wide Head T-Shaped Gate Recessed by ECR Plasma Etching-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume38-
dc.citation.issue2-
dc.citation.beginningpage654-
dc.citation.endingpage657-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.localauthorPark, Chul Soon-
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