DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Chul Soon | ko |
dc.date.accessioned | 2013-02-27T10:34:49Z | - |
dc.date.available | 2013-02-27T10:34:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.38, no.2, pp.654 - 657 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/68009 | - |
dc.language | English | - |
dc.publisher | Japan Soc Applied Physics | - |
dc.title | Noise Performances of Pseudomorphic A1GaAs/InGaAs/GaAs HEMTs with Wide Head T-Shaped Gate Recessed by ECR Plasma Etching | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 654 | - |
dc.citation.endingpage | 657 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Park, Chul Soon | - |
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