A low-power monolithic GaAs FET bandpass filter based on negative resistance technique

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dc.contributor.authorCho, YHko
dc.contributor.authorHong, Songcheolko
dc.contributor.authorKwon, YSko
dc.date.accessioned2013-02-27T09:38:04Z-
dc.date.available2013-02-27T09:38:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-04-
dc.identifier.citationIEEE MICROWAVE AND GUIDED WAVE LETTERS, v.8, no.4, pp.161 - 163-
dc.identifier.issn1051-8207-
dc.identifier.urihttp://hdl.handle.net/10203/67787-
dc.description.abstractThis paper describes a monolithic GaAs FET active bandpass filter utilizing negative resistance elements, The negative resistance element was realized with a common-drain FET with series inductive feedback and the measured output impedance characteristics are given, The fabricated monolithic forth-order filter showed an insertion loss of 0.7 dB at 4.85 GHz and a 3-dB bandwidth of 50 MHz with a de power consumption of 7.5 mW.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectACTIVE INDUCTORS-
dc.titleA low-power monolithic GaAs FET bandpass filter based on negative resistance technique-
dc.typeArticle-
dc.identifier.wosid000072769100005-
dc.identifier.scopusid2-s2.0-0032036379-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue4-
dc.citation.beginningpage161-
dc.citation.endingpage163-
dc.citation.publicationnameIEEE MICROWAVE AND GUIDED WAVE LETTERS-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorCho, YH-
dc.contributor.nonIdAuthorKwon, YS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoractive filter-
dc.subject.keywordAuthorbandpass filter-
dc.subject.keywordAuthormicrowave FET integrated circuits-
dc.subject.keywordAuthornegative resistance circuits-
dc.subject.keywordPlusACTIVE INDUCTORS-
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