DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CH | ko |
dc.contributor.author | Lee, J | ko |
dc.contributor.author | Kim, Beom-Sup | ko |
dc.contributor.author | Park, CS | ko |
dc.contributor.author | Lee, S | ko |
dc.contributor.author | Park, CW | ko |
dc.contributor.author | Roh, JG | ko |
dc.contributor.author | Nam, HS | ko |
dc.contributor.author | Kim, DG | ko |
dc.contributor.author | Jung, TS | ko |
dc.contributor.author | Cho, SI | ko |
dc.date.accessioned | 2013-02-27T09:18:48Z | - |
dc.date.available | 2013-02-27T09:18:48Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-11 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.33, no.11, pp.1703 - 1710 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67713 | - |
dc.description.abstract | A 64-Mbit bidirectional data strobed, double-data-rate SDRAM achieves a peak bandwidth of 2.56 GByte/s on a 64-bit-channel, 256-MByte memory system at V-cc = 3.3 V and T = 25 degrees C. The circuit features are: 1) a bidirectional data strobing scheme to eliminate the clock-related skews of I/O data in a multimodule system, 2) a low-power delay-locked loop having a wide range of locking frequency (40-160 MHz) with fast access time and minimal variations, and 3) a twisted data bussing architecture with minimized loading difference between I/O data paths and small chip-size overhead associated with the 2-bit prefetch operation. | - |
dc.language | English | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.subject | DELAY | - |
dc.title | A 64-Mbit, 640-MByte/s bidirectional data strobed, double-data-rate SDRAM with a 40-mW DLL for a 256-MByte memory system | - |
dc.type | Article | - |
dc.identifier.wosid | 000076702900015 | - |
dc.identifier.scopusid | 2-s2.0-0032206426 | - |
dc.type.rims | ART | - |
dc.citation.volume | 33 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 1703 | - |
dc.citation.endingpage | 1710 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.identifier.doi | 10.1109/4.726563 | - |
dc.contributor.localauthor | Kim, Beom-Sup | - |
dc.contributor.nonIdAuthor | Kim, CH | - |
dc.contributor.nonIdAuthor | Lee, J | - |
dc.contributor.nonIdAuthor | Park, CS | - |
dc.contributor.nonIdAuthor | Lee, S | - |
dc.contributor.nonIdAuthor | Park, CW | - |
dc.contributor.nonIdAuthor | Roh, JG | - |
dc.contributor.nonIdAuthor | Nam, HS | - |
dc.contributor.nonIdAuthor | Kim, DG | - |
dc.contributor.nonIdAuthor | Jung, TS | - |
dc.contributor.nonIdAuthor | Cho, SI | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DELAY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.