DETERMINATION OF DOPING CONCENTRATION AND INTERFACE CHARGES FOR THIN-FILM SOI MOSFET(S)

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An accurate method for extracting the Si film doping concentration and the fixed charge density at both front and back silicon/silicon dioxide interfaces of fully depleted SOI devices is proposed. The method utilizes the current-voltage and capacitance-voltage characteristics of both SOI NMOSFET and PMOSFET which have the same doping concentration. The desired device parameters are extracted from the threshold voltages of the SOI NMOSFET and PMOSFET with proper back surface conditions (accumulation and inversion) and the capacitance-voltage characteristics of the SOI PMOSFET. Device simulations show that the proposed method has less than 10% error for a wide range of the film doping concentrations and fixed charge densities.
Publisher
Pergamon-Elsevier Science Ltd
Issue Date
1993-05
Language
English
Article Type
Article
Keywords

THRESHOLD VOLTAGE; CHANNEL MOSFETS; MODEL

Citation

SOLID-STATE ELECTRONICS, v.36, no.5, pp.735 - 740

ISSN
0038-1101
URI
http://hdl.handle.net/10203/67639
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