This paper introduces a gate-driven mixed mode excitation that is applicable to dimmable electronic ballasts. The proposed approach combines the characteristics of self-oscillating mode and external excitation. In the mixed mode excitation, the metal oxide semiconductor field effect transistors in an electronic ballast are turned on by the resonant current and turned off by the gate driver, which is triggered by a low voltage control integrated circuit (IC). By adjusting this triggering point, the low voltage control IC controls the switching frequency of the electronic ballast. In the electronic ballast with mixed mode excitation, filament preheating, dimming, and protection are all implemented by the low voltage control IC, which is fabricated in a 3.3-V standard CMOS process. The proposed approach allows for the realization of a low cost and high performance electronic ballast.