AMORPHOUS-SILICON BASED RADIATION DETECTORS

Abstract

We describe the characteristics of thin(1-mu-m) and thick (> 30-mu-m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and gamma-rays. For x-ray, gamma-ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays.