HIGH-EFFICIENCY (1.2MW/MA) TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS

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dc.contributor.authorLee, Yong-Heeko
dc.contributor.authorTELL, Bko
dc.contributor.authorBROWNGOEBELER, Kko
dc.contributor.authorJEWELL, JLko
dc.contributor.authorLEIBENGUTH, REko
dc.contributor.authorASOM, MTko
dc.contributor.authorLIVESCU, Gko
dc.contributor.authorLUTHER, Lko
dc.contributor.authorMATTERA, VDko
dc.date.accessioned2013-02-25T21:02:45Z-
dc.date.available2013-02-25T21:02:45Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1990-08-
dc.identifier.citationELECTRONICS LETTERS, v.26, no.16, pp.1308 - 1310-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/65255-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.titleHIGH-EFFICIENCY (1.2MW/MA) TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS-
dc.typeArticle-
dc.identifier.wosidA1990DV08500053-
dc.type.rimsART-
dc.citation.volume26-
dc.citation.issue16-
dc.citation.beginningpage1308-
dc.citation.endingpage1310-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:19900841-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorTELL, B-
dc.contributor.nonIdAuthorBROWNGOEBELER, K-
dc.contributor.nonIdAuthorJEWELL, JL-
dc.contributor.nonIdAuthorLEIBENGUTH, RE-
dc.contributor.nonIdAuthorASOM, MT-
dc.contributor.nonIdAuthorLIVESCU, G-
dc.contributor.nonIdAuthorLUTHER, L-
dc.contributor.nonIdAuthorMATTERA, VD-
dc.type.journalArticleArticle-
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