GROWTH PROPERTIES OF Y1Ba2Cu3O7-delta THIN FILM ON CeO2(/MgO) BUFFER LAYER FOR THE BIEPITAXIAL BOUNDARY JUNCTION

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dc.contributor.authorYoum, Do-Junko
dc.contributor.authorLee, Sangsukko
dc.date.accessioned2013-02-25T19:38:46Z-
dc.date.available2013-02-25T19:38:46Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationIEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, v.3, no.1, pp.1065 - 1067-
dc.identifier.issn1051-8223-
dc.identifier.urihttp://hdl.handle.net/10203/64758-
dc.description.abstractIn the fabrication of Y1Ba2Cu3O7-delta (YBCO)/CeO2/MgO/SrTiO3 - YBCO/CeO2/SrTiO3 biepitaxial grain boundary junctions, the substrate temperature window for the growth of good quality superconduting YBCO overlayers on CeO2/MgO/SrTiO3 is lower and narrower than for growth of YBCO on CeO2/SrTiO3. Results of XRD 2 theta and phi scan measurements reveal that the lattice structure of the CeO2 layer on the MgO seed layer is 2 similar to 3 times more distorted than for CeO2 on a bare SrTiO3 substrate. It is interesting that the instability of the crystal formation of the YBCO layer on the CeO2/MgO/SrTiO3 is accompanied by the loss of stoichiometry at slightly higher Twb.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleGROWTH PROPERTIES OF Y1Ba2Cu3O7-delta THIN FILM ON CeO2(/MgO) BUFFER LAYER FOR THE BIEPITAXIAL BOUNDARY JUNCTION-
dc.typeArticle-
dc.identifier.wosid000209703200039-
dc.type.rimsART-
dc.citation.volume3-
dc.citation.issue1-
dc.citation.beginningpage1065-
dc.citation.endingpage1067-
dc.citation.publicationnameIEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY-
dc.identifier.doi10.1109/77.233884-
dc.contributor.localauthorYoum, Do-Jun-
dc.contributor.nonIdAuthorLee, Sangsuk-
dc.type.journalArticleArticle-
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