DC Field | Value | Language |
---|---|---|
dc.contributor.author | ASANO, T | ko |
dc.contributor.author | ISHIWARA, H | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.contributor.author | TSUTSUI, K | ko |
dc.contributor.author | FURUKAWA, S | ko |
dc.date.accessioned | 2013-02-25T19:11:37Z | - |
dc.date.available | 2013-02-25T19:11:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1986-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.2, pp.139 - 141 | - |
dc.identifier.uri | http://hdl.handle.net/10203/64584 | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.title | FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS | - |
dc.type | Article | - |
dc.identifier.wosid | A1986A311000016 | - |
dc.identifier.scopusid | 2-s2.0-0022663381 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 139 | - |
dc.citation.endingpage | 141 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.identifier.doi | 10.1143/JJAP.25.L139 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | ASANO, T | - |
dc.contributor.nonIdAuthor | ISHIWARA, H | - |
dc.contributor.nonIdAuthor | TSUTSUI, K | - |
dc.contributor.nonIdAuthor | FURUKAWA, S | - |
dc.type.journalArticle | Article | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.