METASTABILITY AND CHEMICAL BONDING OF S-INDUCED DEFECTS IN GAAS AND INP

Abstract

We examine the pressure behavior of two S-induced deep levels, which arise from negatively charged broken-bond (DX-) and on-site (D-) geometries, in GaAs and InP, and find the DX-state to be the ground state over the D- and shallow donor states at pressures of 18 and 88 kbar, respectively, in good agreement with experimental data. The DX- state is characterized by the conduction band structure, while the formation of the D- state is closely related to the local chemical bonding, exhibiting the semiconductor-dependent pressure variation.