GaAs 및 AlGaAs 완충층을 이용한 GaAs MESFET 제작
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이희철 | ko |
| dc.contributor.author | 곽동화 | ko |
| dc.date.accessioned | 2013-02-25T16:57:54Z | - |
| dc.date.available | 2013-02-25T16:57:54Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-10 | - |
| dc.identifier.citation | 대한전자공학회 논문지, v.31, no.12, pp.1654 - 1659 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/63725 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | GaAs 및 AlGaAs 완충층을 이용한 GaAs MESFET 제작 | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 31 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 1654 | - |
| dc.citation.endingpage | 1659 | - |
| dc.citation.publicationname | 대한전자공학회 논문지 | - |
| dc.contributor.localauthor | 이희철 | - |
| dc.contributor.nonIdAuthor | 곽동화 | - |
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