DC Field | Value | Language |
---|---|---|
dc.contributor.author | T. S. Kim | ko |
dc.contributor.author | Kim, Chong Hee | ko |
dc.date.accessioned | 2013-02-25T15:49:52Z | - |
dc.date.available | 2013-02-25T15:49:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.75, no.12, pp.7998 - 8003 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/63324 | - |
dc.description.abstract | Structural and electrical properties bf rf magnetron-sputtered Ba1-xSrxTiO3 thin films (x = 0, 0.25, 0.5, 0.75, 1) on indium-tin-oxide-coated glass substrate were studied. The dense Ba1-xSrxTiO3 thin films sputtered from five different targets at the deposition temperature of 550-degrees-C had individual orientations. The results of compositional analysis in films showed the deviation from the stoichiometry [(Ba + Sr)/Ti = 1.009 - 1.089] with the increase of SrTiO3 content in the targets. The tetragonality in crystallographic structure of Ba1-xSrxTiO3 thin films was not observed even in the case of < x = 0.3. The large frequency and composition dependence of epsilon' and tan delta were also observed. There were no significant changes in epsilon' up to x = 0.5; however, the maximum value (epsilon' = 204 at 100 kHz) around x = 0.25 was in accordance with the results of bulk Ba1-xSrxTiO3 except at 1000 kHz. Above x = 0.5, however, larger decreases of the dielectric constant were observed. The maximum values of epsilon' in x = 0.25, 0.5, 0.75 were shown around the measuring temperatures of 50, 25, -20-degrees-C, respectively, indicating the diffuse phase transition in Ba1-xSrxTiO3 thin films. The observed increases in epsilon' and tan delta above 125-degrees-C are well explained with the barrier model. Nonlinear current-voltage characteristics in Ba1-xSrxTiO3 thin films showed that the lower the SrTiO3 content, the leakier Ba1-xSrxTiO3 thin films became, and the increase of SrTiO3 content leads to the increase of the breakdown fields from 1.7 to 2.7 MV/cm. | - |
dc.language | English | - |
dc.publisher | Amer Inst Physics | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | TITANATE | - |
dc.subject | BATIO3 | - |
dc.subject | FABRICATION | - |
dc.title | Structural and Electrical Properties of rf Magnetron-Sputtered Ba1-x SrxTiO3 Thin Films on Indium-Tin Oxide-Coated Glass Sbustrate | - |
dc.type | Article | - |
dc.identifier.wosid | A1994NQ98600057 | - |
dc.identifier.scopusid | 2-s2.0-33745695468 | - |
dc.type.rims | ART | - |
dc.citation.volume | 75 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 7998 | - |
dc.citation.endingpage | 8003 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.nonIdAuthor | T. S. Kim | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | TITANATE | - |
dc.subject.keywordPlus | BATIO3 | - |
dc.subject.keywordPlus | FABRICATION | - |
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