AMORPHOUS-SILICON PIXEL RADIATION DETECTORS AND ASSOCIATED THIN-FILM-TRANSISTOR ELECTRONICS READOUT

Abstract

We describe the characteristics of thin (1 mum) and thick (> 30 mum) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays, gamma rays and thermal neutrons. For x-ray, gamma ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2-5 mum) gadolinium converters on 30 mum thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described.