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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks Kim, DY; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1628 - 1632, 2006-06 | |
| Electronic structure of a magnetic quantum ring Kim, N; Ihm, G; Sim, Heung-Sun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.60, no.12, pp.8767 - 8772, 1999-09 | |
| A first-principles study of Mg-related defects in GaN Chang, Kee-Joo; Lee, SG, MATERIALS SCIENCE FORUM, v.258-263, pp.1137 - 1141, 1997-12 | |
| Magnetic edge states in a magnetic quantum dot Sim, Heung-Sun; Ahn, KH; Chang, Kee-Joo; Ihm, G; Kim, N; Lee, SJ, PHYSICAL REVIEW LETTERS, v.80, no.7, pp.1501 - 1504, 1998-02 | |
| Exciton binding energies in GaN/AlGaN quantum-well structures Chung, TY; Chang, Kee-Joo, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.13, no.8, pp.876 - 881, 1998-08 | |
| Atomic model for the electrical deactivation of N in Si oxynitrides Lee, EC; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.340, pp.974 - 977, 2003-12 |
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