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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Enhanced optical properties of InGaN MQWs with InGaN underlying layers Son, JK; Lee, SN; Sakong, T; Paek, HS; Nam, O; Park, Y; Hwang, JS; Kim, JY; Cho, Yong-Hoon, JOURNAL OF CRYSTAL GROWTH, v.287, pp.558 - 561, 2006-01 | |
| Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD Lee, SN; Son, J; Sakong, T; Lee, W; Paek, H; Yoon, E; Kim, J; Cho, Yong-Hoon; Nam, O; Park, Y, JOURNAL OF CRYSTAL GROWTH, v.272, pp.455 - 459, 2004-12 | |
| Optical properties of In-rich InGaN/GaN single quantum well structures with high density of clusters Sun, YP; Cho, Yong-Hoon; Kim, HM; Kang, TW; Kwon, SY; Yoon, E, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S615 - S617, 2004-12 | |
| Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells Lee, Sung-Nam; Paek, H. S.; Kim, H.; Kim, K. K.; Cho, Yong-Hoon; Jang, T.; Park, Y., JOURNAL OF CRYSTAL GROWTH, v.310, no.16, pp.3881 - 3883, 2008-08 | |
| Effect of Si doping on the structural and the optical properties in high-quality AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition Kwack, HS; Cho, Yong-Hoon; Bae, SB; Oh, DK; Lee, KS; Kim, CS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.1137 - 1141, 2005-05 | |
| Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers Cho, HK; Lee, KH; Kim, SW; Park, KS; Cho, Yong-Hoon; Lee, JH, JOURNAL OF CRYSTAL GROWTH, v.267, pp.67 - 73, 2004-06 |