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Results 1-2 of 2 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode

Ryu, SP; Lee, YT; Cho, NK; Choi, WJ; Song, JD; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.102, pp.561 - 569, 2007-07

2
Optical and structural properties of In0.5Ga0.5As quantum dots with different numbers of stacks grown by atomic layer molecular beam epitaxy: vertical realignment of weakly coupled quantum dots

Kwack, Ho-Sang; Kim, Byoung-O; Cho, Yong-Hoon; Song, Jin-Dong; Choi, Won-Jun; Lee, Jung-Il, NANOTECHNOLOGY, v.18, no.31, 2007-08

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