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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties Kwon, SY; Kim, HJ; Na, H; Kim, YW; Seo, HC; Shin, Y; Yoon, E; Sun, Y; Cho, Yong-Hoon; Yoon, JW; Cheong, HM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.S130 - S133, 2005-06 | |
| Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature Jeon, HC; Lee, JA; Shon, Y; Lee, SJ; Kang, TW; Kim, TW; Yeo, YK; Cho, Yong-Hoon; Kim, MD, JOURNAL OF CRYSTAL GROWTH, v.278, pp.671 - 674, 2005-05 | |
| Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices Song, JD; Park, YJ; Han, IK; Cho, WJ; Lee, JI; Cho, Yong-Hoon; Lee, JY, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.26, pp.86 - 90, 2005-02 | |
| Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.47, pp.1002 - 1005, 2005-12 | |
| Optical properties and carrier dynamics of two-dimensional electrons in AlGaN/GaN single heterostructures Kwack, HS; Cho, Yong-Hoon; Kim, GH; Park, MR; Youn, DH; Bae, SB; Lee, KS; Lee, JH; Kim, TW; Kang, TW; Wang, KL, APPLIED PHYSICS LETTERS, v.87, pp.3751 - 3762, 2005-07 | |
| Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1-xN/GaN heterostructures Kim, TW; Choo, DC; Yoo, KH; Jung, MH; Cho, Yong-Hoon; Lee, JH, JOURNAL OF APPLIED PHYSICS, v.97, pp.1052 - 1057, 2005-05 | |
| Effect of Si doping on the structural and the optical properties in high-quality AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition Kwack, HS; Cho, Yong-Hoon; Bae, SB; Oh, DK; Lee, KS; Kim, CS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.1137 - 1141, 2005-05 | |
| High efficiency and brightness of blue light emission from dislocation-free InGaN/GaN quantum well nanorod arrays Sun, YP; Cho, Yong-Hoon; Kim, HM; Kang, TW, APPLIED PHYSICS LETTERS, v.87, pp.373 - 380, 2005-08 | |
| Effect of thermal damage on optical and structural properties of In 0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD Lee S.-N.; Nam O.; Park Y.; Son J.; Paek H.; Sakong T.; Lee W.; Kim K.; Lee S.-N.; Yoon E.; Kim J.; Cho, Yong-Hoon; Lee Y.; Kim S.; Noh D.; Lee S.-N., JOURNAL OF CRYSTAL GROWTH, v.275, no.1-2, pp.e1041 - e1045, 2005-02 | |
| Growth and characteristics of Ni-based Schottky-type AlxGa1-xN ultraviolet photodetectors with AlGaN/GaN superlattices Park, KY; Kwon, BJ; Cho, Yong-Hoon; Lee, SA; Son, JH, JOURNAL OF APPLIED PHYSICS, v.98, pp.1891 - 1894, 2005-12 |
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