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Results 1-6 of 6 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
Enhanced optical properties of InGaN MQWs with InGaN underlying layers

Son, JK; Lee, SN; Sakong, T; Paek, HS; Nam, O; Park, Y; Hwang, JS; Kim, JY; Cho, Yong-Hoonresearcher, JOURNAL OF CRYSTAL GROWTH, v.287, pp.558 - 561, 2006-01

Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD

Lee, SN; Son, J; Sakong, T; Lee, W; Paek, H; Yoon, E; Kim, J; Cho, Yong-Hoonresearcher; Nam, O; Park, Y, JOURNAL OF CRYSTAL GROWTH, v.272, pp.455 - 459, 2004-12

Optical properties of In-rich InGaN/GaN single quantum well structures with high density of clusters

Sun, YP; Cho, Yong-Hoonresearcher; Kim, HM; Kang, TW; Kwon, SY; Yoon, E, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S615 - S617, 2004-12

Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells

Lee, Sung-Nam; Paek, H. S.; Kim, H.; Kim, K. K.; Cho, Yong-Hoonresearcher; Jang, T.; Park, Y., JOURNAL OF CRYSTAL GROWTH, v.310, no.16, pp.3881 - 3883, 2008-08

Effect of Si doping on the structural and the optical properties in high-quality AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Kwack, HS; Cho, Yong-Hoonresearcher; Bae, SB; Oh, DK; Lee, KS; Kim, CS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.1137 - 1141, 2005-05

Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers

Cho, HK; Lee, KH; Kim, SW; Park, KS; Cho, Yong-Hoonresearcher; Lee, JH, JOURNAL OF CRYSTAL GROWTH, v.267, pp.67 - 73, 2004-06

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