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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties Kwon, SY; Kim, HJ; Na, H; Kim, YW; Seo, HC; Shin, Y; Yoon, E; Sun, Y; Cho, Yong-Hoon; Yoon, JW; Cheong, HM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.S130 - S133, 2005-06 | |
| Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers Cho, Yong-Hoon; Kim, JY; Kwack, HS; Kwon, BJ; Dang, LS; Ko, HJ; Yao, T, APPLIED PHYSICS LETTERS, v.89, pp.1681 - 1688, 2006-11 | |
| Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization Cho, Yong-Hoon; Kwon, BJ; Barjon, J; Brault, J; Daudin, B; Mariette, H; Dang, LS, APPLIED PHYSICS LETTERS, v.81, no.26, pp.4934 - 4936, 2002-12 | |
| Influence of thermal damage and the interruption time on the optical properties of InGaN quantum wall structures Cho, Yong-Hoon; Son, CW; Kim, JY; Kim, BM; Lee, WS; Lee, SN; Son, JK; Nam, H; Park, YJ, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, pp.L792 - L795, 2004-04 | |
| Effect of growth interruption on optical properties of In-rich InGaN/GaN single quantum well structures Sun, YP; Cho, Yong-Hoon; Kim, HM; Kang, TW; Kwon, SY; Yoon, E, JOURNAL OF APPLIED PHYSICS, v.100, pp.643 - 645, 2006-08 | |
| Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers Cho, HK; Lee, KH; Kim, SW; Park, KS; Cho, Yong-Hoon; Lee, JH, JOURNAL OF CRYSTAL GROWTH, v.267, pp.67 - 73, 2004-06 | |
| Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters Cho, Yong-Hoon; Lee, SK; Kwack, HS; Kim, JY; Lim, KS; Kim, HM; Kang, TW; Lee, SN; Seon, MS; Nam, OH; Park, YJ, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2578 - 2580, 2003-09 | |
| Dynamics of anomalous optical transitions in AlxGa1-xN alloys Cho, Yong-Hoon; Gainer, GH; Lam, JB; Song, JJ; Yang, W; Jhe, W, PHYSICAL REVIEW B, v.61, no.11, pp.7203 - 7206, 2000-03 | |
| Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates Hwang, JS; Gokarna, A; Cho, Yong-Hoon; Son, JK; Sakong, T; Paek, HS; Nam, OH; Park, Y, APPLIED PHYSICS LETTERS, v.90, pp.178 - 182, 2007-03 |
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