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Results 1-4 of 4 (Search time: 0.007 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Optical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy

Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG; Yu, JS; Choo, AG; Kim, TL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.160 - 162, 1997-06

2
Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface

Cho, Yong-Hoon; Kim, DS; Choe, BD; Lim, H; Lee, JI; Kim, D, PHYSICAL REVIEW B, v.56, pp.R4375 - R4378, 1997

3
Femtosecond degenerate four-wave mixing in 500 mu m undoped GaAs and 350 mu m undoped InP far below band gap

Yu, S; Kim, D; Kim, DS; Lee, YH; Cho, Yong-Hoon; Choe, BD; Lee, JH, JOURNAL OF APPLIED PHYSICS, v.81, no.10, pp.6928 - 6933, 1997-05

4
Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy

Cho, Yong-Hoon; Choe, BD; Kim, Y; Lim, H, JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366, 1997-06

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