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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999 | |
| Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999 | |
| Linear and nonlinear optical properties of In(x)Ga(1-x)N/GaN heterostructures Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, PHYSICAL REVIEW B, v.61, no.11, pp.7571 - 7588, 2000-03 | |
| Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Song, JJ; Keller, S; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130, 1998-08 | |
| "S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Gainer, GH; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.10, pp.1370 - 1372, 1998-09 | |
| High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration Cho, Yong-Hoon; Fedler, F; Hauenstein, RJ; Park, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, JOURNAL OF APPLIED PHYSICS, v.85, no.5, pp.3006 - 3008, 1999-03 |
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