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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides Cho, Yong-Hoon; Kwack, HS; Kwon, BJ; Barjon, J; Brault, J; Daudin, B; Dang, LS, APPLIED PHYSICS LETTERS, v.89, pp.1051 - 1053, 2006-12 | |
| High Efficient Polarization-Matched InGaN/MgZnO Quantum Well Structures Park, Seoung-Hwan; Ahn, Doyeol; Cho, Yong-Hoon, IEEE PHOTONICS TECHNOLOGY LETTERS, v.24, no.6, pp.494 - 496, 2012-03 | |
| Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999 | |
| Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature Jeon, HC; Lee, JA; Shon, Y; Lee, SJ; Kang, TW; Kim, TW; Yeo, YK; Cho, Yong-Hoon; Kim, MD, JOURNAL OF CRYSTAL GROWTH, v.278, pp.671 - 674, 2005-05 | |
| Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Song, JJ; Keller, S; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130, 1998-08 | |
| Tunable Catalytic Alloying Eliminates Stacking Faults in Compound Semiconductor Nanowires Heo, Ho-Seok; Kang, Ki-Bum; Lee, Dong-Hun; Jin, Li-Hua; Back, Hyeon-Jun; Hwang, In-Chan; Kim, Mi-Seong; Lee, Hyun-Seung; Lee, Byeong-Joo; Yi, Gyu-Chul; Cho, Yong-Hoon; Jo, Moon-Ho, NANO LETTERS, v.12, no.2, pp.855 - 860, 2012-02 | |
| Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters Cho, Yong-Hoon; Lee, SK; Kwack, HS; Kim, JY; Lim, KS; Kim, HM; Kang, TW; Lee, SN; Seon, MS; Nam, OH; Park, YJ, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2578 - 2580, 2003-09 | |
| Band-edge exciton transitions in (Ga1-xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition Jeon, H. C.; Kang, T. W.; Kim, T. W.; Cho, Yong-Hoon, SOLID STATE COMMUNICATIONS, v.138, no.9, pp.444 - 447, 2006 | |
| Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods Park, YS; Kang, TW; Im, H; Lee, SK; Cho, YH; Park, CM; Han, MS; Taylor, RA; Kang, TW; Lee, SK; Cho, Yong-Hoon; Han, MS; Taylor, RA, JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.4, pp.307 - 311, 2009-12 | |
| Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition Kim, Je Hyung; Elmaghraoui, Donia; Leroux, Mathieu; Korytov, Maxim; Vennegues, Philippe; Jaziri, Sihem; Brault, Julien; Cho, Yong-Hoon, NANOTECHNOLOGY, v.25, no.30, pp.305703-1 - 305703-11, 2014-08 |
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