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Results 1-10 of 28 (Search time: 0.005 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells

Cho, Yong-Hoonresearcher; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999

2
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells

Cho, Yong-Hoonresearcher; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999

3
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon

Bidnyk, S; Little, BD; Cho, Yong-Hoonresearcher; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 48, 1999

4
Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells

Schmidt, TJ; Cho, Yong-Hoonresearcher; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.5, pp.560 - 562, 1998-08

5
Optical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy

Kwon, YH; Cho, Yong-Hoonresearcher; Choe, BD; Park, SK; Jeong, WG; Yu, JS; Choo, AG; Kim, TL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.160 - 162, 1997-06

6
Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis

Kim, IJ; Cho, Yong-Hoonresearcher; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06

7
Probing optical-phonon propagation in GaAs/AlxGa1-xAs quantum-well samples via their nonequilibrium population

Yu, PY; Su, ZP; Kim, DS; Khim, JS; Lim, YS; Yee, YH; Cho, Yong-Hoonresearcher; Lee, JS; Lee, JH; Chang, JS; Choe, BD; Woo, DH; Shin, EJ; Arya, K; Song, JJ, PHYSICAL REVIEW B, v.54, no.15, pp.10742 - 10750, 1996-10

8
DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT

Kim, Kwan‐Shik; Cho, Yong-Hoonresearcher; Choe, Byung‐Doo; Jeong, Weon Guk; H. Lim, APPLIED PHYSICS LETTERS, v.67, no.12, pp.1718 - 1720, 1995-09

9
Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-II heterostructures

Cho, Yong-Hoonresearcher; Song, JJ; Lim, H; Choe, BD; Lee, JI; Kim, D, APPLIED PHYSICS LETTERS, v.73, no.9, pp.1245 - 1247, 1998-08

10
Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate

Cho, Yong-Hoonresearcher; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.69, no.24, pp.3740 - 3742, 1996-12

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