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Results 31-40 of 251 (Search time: 0.004 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
31
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells

Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999

32
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells

Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999

33
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon

Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 48, 1999

34
Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells

Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.5, pp.560 - 562, 1998-08

35
Optical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy

Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG; Yu, JS; Choo, AG; Kim, TL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.160 - 162, 1997-06

36
Highly efficient yellow photoluminescence from {11-22} InGaN multiquantum-well grown on nanoscale pyramid structure

Kim, Taek; Kim, Joosung; Yang, Moon-Seung; Lee, Sangmoon; Park, Youngsoo; Chung, U-In; Cho, Yong-Hoon, APPLIED PHYSICS LETTERS, v.97, no.24, 2010-12

37
Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization

Cho, Yong-Hoon; Kwon, BJ; Barjon, J; Brault, J; Daudin, B; Mariette, H; Dang, LS, APPLIED PHYSICS LETTERS, v.81, no.26, pp.4934 - 4936, 2002-12

38
Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD

Lee, SN; Son, J; Sakong, T; Lee, W; Paek, H; Yoon, E; Kim, J; Cho, Yong-Hoon; Nam, O; Park, Y, JOURNAL OF CRYSTAL GROWTH, v.272, pp.455 - 459, 2004-12

39
Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature

Jeon, HC; Lee, JA; Shon, Y; Lee, SJ; Kang, TW; Kim, TW; Yeo, YK; Cho, Yong-Hoon; Kim, MD, JOURNAL OF CRYSTAL GROWTH, v.278, pp.671 - 674, 2005-05

40
Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition

Choi, Yong-Seok; Hwang, Dae-Kue; Kwon, Bong-Joon; Kang, Jang-Won; Cho, Yong-Hoon; Park, Seong-Ju, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.10, 2011-10

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