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Results 41-50 of 69 (Search time: 0.007 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Near-field photoreflectance spectroscopic studies of semiconductor quantum well structures Cho, Yong-Hoon; Kang, TW; Jhe, W, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.253 - 256, 2001-12 | |
| Optical properties and deep levels in annealed Si1-xMnx bulk materials Kwon, YH; Kang, TW; Park, CJ; Cho, HY; Kim, TW; Lee, JY; Wang, KL; Kim, BO; Kim, SM; Cho, Yong-Hoon, SOLID STATE COMMUNICATIONS, v.140, pp.14 - 17, 2006-10 | |
| Spatially-resolved optical studies on intermixing of InGaAs quantum-dot laser structures by using an AlAs native oxide and thermal annealing Kwon, BJ; Hwang, JS; Cho, Yong-Hoon; Cho, NK; Jeon, HS; Song, JD; Choi, WJ; Lee, JI; Rho, H, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.1635 - 1638, 2004-12 | |
| Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers Cho, HK; Lee, KH; Kim, SW; Park, KS; Cho, Yong-Hoon; Lee, JH, JOURNAL OF CRYSTAL GROWTH, v.267, pp.67 - 73, 2004-06 | |
| Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer Sun, YP; Cho, Yong-Hoon; Suh, EK; Lee, HJ; Choi, RJ; Hahn, YB, APPLIED PHYSICS LETTERS, v.84, no.1, pp.49 - 51, 2004-01 | |
| Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect Son, J. K.; Sakong, T.; Lee, S. N.; Paek, H. S.; Ryu, H.; Ha, K. H.; Nam, O.; Park, Y.; Hwang, J. S.; Cho, Yong-Hoon, APPLIED PHYSICS LETTERS, v.90, no.5, 2007-01 | |
| Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode Ryu, SP; Lee, YT; Cho, NK; Choi, WJ; Song, JD; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.102, pp.561 - 569, 2007-07 | |
| Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition Kwack, Ho-Sang; Kwon, Bong-Joon; Chung, Jin-Soo; Cho, Yong-Hoon; Kwon, Soon-Yong; Kim, Hee Jin; Yoon, Euijoon, APPLIED PHYSICS LETTERS, v.93, no.16, 2008-10 | |
| Effect of surface plasmon polariton mode on spontaneous emission in gold coated GaN/InGaN quantum-well structures Park, CH; Choi, JW; Cho, Yong-Hoon; Kim, SI; Son, JK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.905 - 909, 2007-03 | |
| Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters Cho, Yong-Hoon; Lee, SK; Kwack, HS; Kim, JY; Lim, KS; Kim, HM; Kang, TW; Lee, SN; Seon, MS; Nam, OH; Park, YJ, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2578 - 2580, 2003-09 |