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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters Cho, Yong-Hoon; Lee, SK; Kwack, HS; Kim, JY; Lim, KS; Kim, HM; Kang, TW; Lee, SN; Seon, MS; Nam, OH; Park, YJ, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2578 - 2580, 2003-09 | |
| Optical properties of laterally overgrown GaN pyramids grown on (111) silicon substrate Cho, Yong-Hoon; Kwon, BJ; Kim, HM; Kang, TW; Song, JJ; Yang, W, CURRENT APPLIED PHYSICS, v.2, pp.515 - 519, 2002 | |
| High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays Kim, HM; Cho, Yong-Hoon; Lee, H; Kim, SI; Ryu, SR; Kim, DY; Kang, TW; Chung, KS, NANO LETTERS, v.4, pp.1059 - 1062, 2004-06 | |
| Spatially resolved cathodoluminescence of laterally overgrown GaN pyramids on (111) silicon substrate: Strong correlation between structural and optical properties Cho, Yong-Hoon; Kim, HM; Kang, TW; Song, JJ; Yang, W, APPLIED PHYSICS LETTERS, v.80, no.7, pp.1141 - 1143, 2002-02 | |
| Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods Park, YS; Kang, TW; Im, H; Lee, SK; Cho, YH; Park, CM; Han, MS; Taylor, RA; Kang, TW; Lee, SK; Cho, Yong-Hoon; Han, MS; Taylor, RA, JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.4, pp.307 - 311, 2009-12 | |
| Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy Kim, HM; Kim, DS; Kim, DY; Kang, TW; Cho, Yong-Hoon; Chung, KS, APPLIED PHYSICS LETTERS, v.81, no.12, pp.2193 - 2195, 2002-09 |
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