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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis Kim, Min Kwan; Choi, Sunghan; Lee, Joo-Hyung; Park, Chunghyun; Chung, Tae-Hoon; Baek, Jong Hyeob; Cho, Yong-Hoon, SCIENTIFIC REPORTS, v.7, pp.42221, 2017-02 | |
| Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11-22) ones Leroux, M.; Brault, J.; Kahouli, A.; Maghraoui, D.; Damilano, B.; de Mierry, P.; Korytov, M.; Kim, Je Hyung; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.116, no.3, pp.034308-1 - 034308-8, 2014-07 | |
| Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo, JOURNAL OF CRYSTAL GROWTH, v.445, pp.78 - 83, 2016-07 | |
| Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition Cuniot-Ponsard, M.; Saraswati, I.; Ko, Suck Min; Halbwax, M.; Cho, Yong-Hoon; Dogheche, E., APPLIED PHYSICS LETTERS, v.104, no.10, pp.101908-1 - 101908-4, 2014-03 |
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