Results 1-3 of 3 (Search time: 0.008 seconds).
NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
---|---|
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999 | |
Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999 | |
High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Bidnyk, S; Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625, 1998-03 |
Discover