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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Si etching rate calculation for low pressure high density plasma source using Cl-2 gas Lee, YD; Chang, Hong-Young; Chang, Choong-Seock, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.18, no.5, pp.2224 - 2229, 2000
2	Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source S. S. Kim; S. Hamaguchi; N. S. Yoon; Chang, Choong-Seock; Y. D. Lee; S. H. Ku, PHYSICS OF PLASMAS, v.8, no.4, pp.1384 - 1394, 2001-04

Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)

Lee, YD; Chang, Hong-Young; Chang, Choong-Seock, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.18, no.5, pp.2224 - 2229, 2000

S. S. Kim; S. Hamaguchi; N. S. Yoon; Chang, Choong-Seock; Y. D. Lee; S. H. Ku, PHYSICS OF PLASMAS, v.8, no.4, pp.1384 - 1394, 2001-04

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