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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999 | |
| Stimulated emission in GaN thin films in the temperature range of 300-700 K Bidnyk, S; Little, BD; Schmidt, TJ; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Goldenberg, B; Yang, W; Perry, WG; Bremser, MD; Davis, RF, JOURNAL OF APPLIED PHYSICS, v.85, no.3, pp.1792 - 1795, 1999-02 | |
| High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration Cho, Yong-Hoon; Fedler, F; Hauenstein, RJ; Park, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, JOURNAL OF APPLIED PHYSICS, v.85, no.5, pp.3006 - 3008, 1999-03 |
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