Browse "PH-Journal Papers(저널논문)" by Subject OXIDE INTERFACE
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| Defects responsible for the Fermi level pinning in n(+) poly-Si/HfO2 gate stacks Ryu, Byung-Ki; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.97, no.24, pp.242910, 2010-12 |
| Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks Kim, DY; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1628 - 1632, 2006-06 |
| Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks Kim, DY; Kang, JG; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.88, no.16, pp.162107 - 162107, 2006-04 |
| Reliability issues and role of defects in high-k dielectric HfO2 devices Kang, JG; Kim, DY; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.552 - 557, 2007-03 |
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