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FABRICATION OF INGAAS/INP AVALANCHE PHOTODIODES BY REACTIVE ION ETCHING USING CH4/H-2 GASES PARK, CY; YOO, JB; PARK, C; HYUN, KS; OH, DK; Lee, Yong-Hee; LEE, C; et al, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.13, no.3, pp.974 - 977, 1995 |
HIGH-PERFORMANCE INGAAS INP AVALANCHE PHOTODIODE FOR A 2.5-GBS-1 OPTICAL RECEIVER PARK, CY; HYUN, KS; KANG, SK; SONG, MK; YOON, TY; KIM, HM; PARK, HM; et al, OPTICAL AND QUANTUM ELECTRONICS, v.27, no.5, pp.553 - 559, 1995-05 |
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