Showing results 1 to 5 of 5
780nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells Shin, HE; Ju, YG; Shin, JH; Ser, JH; Kim, T; Lee, EK; Kim, I; et al, ELECTRONICS LETTERS, v.32, no.14, pp.1287 - 1288, 1996-07 |
Effect of carrier diffusion in oxidized vertical-cavity surface-emitting lasers determined from lateral spontaneous emission Shin, JH; Shin, HE; Lee, Yong-Hee, APPLIED PHYSICS LETTERS, v.70, no.20, pp.2652 - 2654, 1997-05 |
Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors Nelson, TR; Prineas, JP; Khitrova, G; Gibbs, HM; Berger, JD; Lindmark, EK; Shin, JH; et al, APPLIED PHYSICS LETTERS, v.69, no.20, pp.3031 - 3033, 1996-11 |
Spontaneous emission factor of oxidized vertical-cavity surface-emitting lasers from the measured below-threshold cavity loss Shin, JH; Ju, YG; Shin, HE; Lee, Yong-Hee, APPLIED PHYSICS LETTERS, v.70, no.18, pp.2344 - 2346, 1997-05 |
Square-lattice photonic-crystal vertical-cavity surface-emitting lasers Lee, KH; Baek, JH; Hwang, IK; Lee, Yong-Hee; Ser, JH; Kim, HD; Shin, HE, OPTICS EXPRESS, v.12, pp.4136 - 4143, 2004-08 |
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