Showing results 1 to 11 of 11
DIATOMIC-HYDROGEN-COMPLEX DIFFUSION AND SELF-TRAPPING IN CRYSTALLINE SILICON Chang, Kee-Joo; CHADI, DJ, PHYSICAL REVIEW LETTERS, v.62, no.8, pp.937 - 940, 1989-02 |
ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS CHADI, DJ; Chang, Kee-Joo, PHYSICAL REVIEW B, v.39, no.14, pp.10063 - 10074, 1989-05 |
EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY CHADI, DJ; Chang, Kee-Joo; WALUKIEWICZ, W, PHYSICAL REVIEW LETTERS, v.62, no.16, pp.1922 - 1922, 1989-04 |
HYDROGEN-BONDING AND DIFFUSION IN CRYSTALLINE SILICON Chang, Kee Joo; CHADI, DJ, PHYSICAL REVIEW B, v.40, no.17, pp.11644 - 11653, 1989-12 |
MAGIC NUMBERS FOR VACANCY AGGREGATION IN CRYSTALLINE SI CHADI, DJ; Chang, Kee-Joo, PHYSICAL REVIEW B, v.38, no.2, pp.1523 - 1525, 1988-07 |
METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS CHADI, DJ; Chang, Kee-Joo, PHYSICAL REVIEW LETTERS, v.60, no.21, pp.2187 - 2190, 1988-05 |
SELF-COMPENSATION THROUGH A LARGE LATTICE-RELAXATION IN P-TYPE ZNSE CHADI, DJ; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.55, no.6, pp.575 - 577, 1989-08 |
THEORY OF BE-INDUCED DEFECTS IN SI TARNOW, E; ZHANG, SB; Chang, Kee-Joo; CHADI, DJ, PHYSICAL REVIEW B, v.42, no.17, pp.11252 - 11260, 1990-12 |
THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON Chang, Kee-Joo; CHADI, DJ, PHYSICAL REVIEW LETTERS, v.60, no.14, pp.1422 - 1425, 1988-04 |
THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS CHADI, DJ; Chang, Kee-Joo, PHYSICAL REVIEW LETTERS, v.61, no.7, pp.873 - 876, 1988-08 |
VIBRATIONAL PROPERTIES OF METASTABLE DIATOMIC HYDROGEN COMPLEXES IN CRYSTALLINE SILICON Chang, Kee-Joo; CHADI, DJ, PHYSICAL REVIEW B, v.42, no.12, pp.7651 - 7654, 1990-10 |
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