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Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks Kim, DY; Kang, JG; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.88, no.16, pp.162107 - 162107, 2006-04 |
Reliability issues and role of defects in high-k dielectric HfO2 devices Kang, JG; Kim, DY; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.552 - 557, 2007-03 |
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